STMicroelectronics M Series 1200V Trench Gate Field-Stop IGBTs
STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.
The STMicroelectronics M Series 1200V Trench Gate Field-Stop IGBTs are offered in a TO-247 package with a -55°C to +175°C operating junction temperature range.
Features
- Low loss IGBT series for applications up to 20kHz
- High robustness and reliability
- 1200V breakdown voltage
- 10µs min. short-circuit rating at 150°C starting TJ
- Extended max operating TJ of 175°C
- Thin IGBT die for increased thermal resistance
- Positive VCE(sat) temperature coefficient, with tight parameter distribution, for design simplification and easy paralleling
- Optimized diode for fast recovery (high level of softness, low EMI and turn-on losses)
Applications
- Industrial drives
- UPS
- Solar
- Welding
Videos
Related Products
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs
High speed IGBTs with a 5μs minimum short circuit withstand time at TJ=150°C.
STMicroelectronics Latest Technologies in Power MOSFET & IGBT
The newest technologies in Power MOSFETs and IGBTs.
STMicroelectronics Silicon Carbide Power MOSFETs
Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.
STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs
Developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology.
STMicroelectronics IGBT V Series
Developed using an advanced proprietary trench gate and field stop structure.
Resources
- Application Notes
Complete Your Design
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
| Part Number | Datasheet | Continuous Collector Current at 25 C | Pd - Power Dissipation |
|---|---|---|---|
| STGYA50M120DF3 |  |
100 A | 535 W |
| STGP8M120DF3 | |
16 A | 167 W |
| STGWA25M120DF3 | |
50 A | 375 W |
| STGW40M120DF3 | |
80 A | 468 W |
| STGWA15M120DF3 | |
30 A | 283 W |
| STGWA40M120DF3 | |
80 A | 468 W |
| STGW25M120DF3 | |
50 A | 326 W |
| STGWA8M120DF3 | |
16 A | 167 W |