SiC MOSFETs – Mouser Romania

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Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = 200°C), and a very fast and robust intrinsic body diode.

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: 100,90 RON
922In Stock
New Product

Mfr. Part No.
SCT016H120G3AG

Mouser Part No
511-SCT016H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Learn More

Datasheet

922In Stock

Cut Tape

100,90 RON

72,94 RON

72,88 RON

72,78 RON

Reel

61,87 RON

MouseReel Available

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

SCT011HU75G3AG
STMicroelectronics
1: 108,20 RON
274In Stock
600Expected 3/9/2026
New Product

Mfr. Part No.
SCT011HU75G3AG

Mouser Part No
511-SCT011HU75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

Learn More

Datasheet

274In Stock

600Expected 3/9/2026

Cut Tape

108,20 RON

79,52 RON

79,47 RON

Reel

67,55 RON

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

750 V

110 A

15 mOhms

- 10 V, + 22 V

3.2 V

154 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: 89,79 RON
640In Stock
New Product

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

640In Stock

89,79 RON

76,51 RON

66,19 RON

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: 88,73 RON
739In Stock
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

739In Stock

Cut Tape

88,73 RON

73,49 RON

63,53 RON

Reel

58,95 RON

Quote

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: 82,64 RON
513In Stock
New Product

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

513In Stock

82,64 RON

68,16 RON

67,60 RON

66,45 RON

View

Min.: 1
Mult.: 1

Through Hole

Hip247-4

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: 78,07 RON
502In Stock
New Product

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

502In Stock

78,07 RON

62,52 RON

54,02 RON

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

SCT040HU120G3AG
STMicroelectronics
1: 58,45 RON
1.011In Stock
600Expected 1/4/2027
New Product

Mfr. Part No.
SCT040HU120G3AG

Mouser Part No
511-SCT040HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Learn More

Datasheet

1.011In Stock

600Expected 1/4/2027

Cut Tape

58,45 RON

40,94 RON

36,07 RON

Reel

35,36 RON

30,68 RON

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

40 A

72 mOhms

- 10 V, + 22 V

3 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3AG
STMicroelectronics
1: 74,24 RON
14In Stock
2.000Expected 10/12/2026
New Product

Mfr. Part No.
SCT025H120G3AG

Mouser Part No
511-SCT025H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

14In Stock

2.000Expected 10/12/2026

Cut Tape

74,24 RON

52,66 RON

49,19 RON

Reel

41,80 RON

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: 88,88 RON
160In Stock

Mfr. Part No.
SCT012H90G3AG

Mouser Part No
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

160In Stock

Cut Tape

88,88 RON

63,83 RON

62,02 RON

Reel

52,71 RON

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: 56,39 RON
629In Stock

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

629In Stock

56,39 RON

39,44 RON

29,83 RON

29,27 RON

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: 54,83 RON
142In Stock

Mfr. Part No.
SCT040HU65G3AG

Mouser Part No
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

142In Stock

Cut Tape

54,83 RON

38,48 RON

33,45 RON

Reel

28,37 RON

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

H2PAK-2

N-Channel

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

SCT070HU120G3AG
STMicroelectronics
1: 59,05 RON
73In Stock
1.200Expected 2/27/2026

Mfr. Part No.
SCT070HU120G3AG

Mouser Part No
511-SCT070HU120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

Learn More

Datasheet

73In Stock

1.200Expected 2/27/2026

Cut Tape

59,05 RON

41,35 RON

36,62 RON

Reel

31,09 RON

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: 74,39 RON
593In Stock

Mfr. Part No.
SCTW40N120G2VAG

Mouser Part No
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Learn More

Datasheet

593In Stock

74,39 RON

46,18 RON

41,90 RON

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

SCTWA40N12G24AG
STMicroelectronics
1: 75,95 RON
90In Stock

Mfr. Part No.
SCTWA40N12G24AG

Mouser Part No
511-SCTWA40N12G24AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Learn More

Datasheet

90In Stock

75,95 RON

53,97 RON

43,01 RON

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

33 A

105 mOhms

- 18 V, + 18 V

5 V

63 nC

- 55 C

+ 200 C

290 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: 104,83 RON
600Expected 7/27/2026

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

600Expected 7/27/2026

104,83 RON

85,76 RON

75,75 RON

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: 78,62 RON
1.200On Order

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

1.200On Order

78,62 RON

62,93 RON

54,42 RON

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

SCT040H120G3AG
STMicroelectronics
1: 54,83 RON
996Expected 4/22/2026

Mfr. Part No.
SCT040H120G3AG

Mouser Part No
511-SCT040H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Learn More

Datasheet

996Expected 4/22/2026

Cut Tape

54,83 RON

38,48 RON

33,45 RON

33,40 RON

Reel

28,37 RON

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: 54,12 RON
1.113Expected 2/23/2026

Mfr. Part No.
SCT055HU65G3AG

Mouser Part No
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

1.113Expected 2/23/2026

Cut Tape

54,12 RON

38,18 RON

33,10 RON

Reel

28,12 RON

MouseReel Available

Min.: 1
Mult.: 1

Reel: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3-7
STMicroelectronics
1: 72,58 RON
100On Order
New Product

Mfr. Part No.
SCT025H120G3-7

Mouser Part No
511-SCT025H120G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

100On Order

Cut Tape

72,58 RON

56,13 RON

48,54 RON

Reel

48,54 RON

Min.: 1
Mult.: 1

Reel: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: 49,24 RON
100On Order
New Product

Mfr. Part No.
SCT040W120G3-4

Mouser Part No
511-SCT040W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

49,24 RON

40,09 RON

33,40 RON

29,78 RON

25,30 RON

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

SCTWA40N120G2V
STMicroelectronics
1: 78,02 RON
Non-Stocked Lead-Time 32 Weeks
NRND

Mfr. Part No.
SCTWA40N120G2V

Mouser Part No
511-SCTWA40N120G2V

NRND

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Learn More

Datasheet

Non-Stocked Lead-Time 32 Weeks

78,02 RON

59,45 RON

49,95 RON

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

2.45 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

Automotive-Grade Silicon Carbide Power MOSFETs

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