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Texas Instruments FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

Features

  • Ultra small footprint (0402 case size)
    • 1.0mmx0.6mm
    • Industry standard package footprint
    • Low height profile - >0.35mm
  • Ultra low resistance, 70% less than competitors
  • Ultra low Qg & Qgd
  • Land grid array (LGA) package maximizes silicon content
  • Optimized ESD ratings
  • Ideal for space-constrained applications such as cell phones and tablets
  • Easy second sourcing
  • Supports thin Z-height products
  • Low power dissipation
  • Low switching losses; Improved light load performance
  • Supports Id currents > 2 amps, double the nearest competitor
  • Robust manufacturing

Applications

  • Handheld and mobile
  • Load switch
  • General purpose switching
  • Battery 
Published: 2015-03-06 | Updated: 2022-03-11