Nexperia GAN041-650WSB Gallium Nitride (GaN) FET
Nexperia GAN041-650WSB Gallium Nitride (GaN) FET offers a 650V drain-source voltage, 47.2A drain current rating, and 41mΩ maximum resistance. The GAN041 comes in a TO-247 package and is a normally-off device that combines high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies. The combination of these technologies provides superior reliability and performance. Nexperia GAN041-650WSB GaN FET is ideal for bridgeless totem-pole PFC, servo motor drives, and hard- and soft-switching converters for industrial and datacom power.
Features
- Ultra-low reverse recovery charge
- Simple gate drive (0V to +10V or 12V)
- Robust gate oxide (±20V capability)
- High gate threshold voltage (+4V) for good gate bounce immunity
- Low source-drain voltage in reverse conduction mode
- Transient overvoltage capability
Applications
- Hard- and soft-switching converters for industrial and datacom power
- Bridgeless totem-pole PFCs
- PV and UPS inverters
- Servo motor drives
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Published: 2021-01-22
| Updated: 2023-05-05