It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVB190N65S3F

Name: onsemi NVB190N65S3F
Brand: onsemi
SKU: 863-NVB190N65S3F
Price: 20.77 RON
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVB190N65S3F

Mfr. No:

NVB190N65S3F

Mfr.:

onsemi

Description:

MOSFETs SUPERFET3 650V FRFET,190M

Datasheet:

NVB190N65S3F Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVB190N65S3F

In Stock: 2.820

Stock:: 2.820 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- RON

Ext. Price:

-,-- RON

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+29,00 RON)

Pricing (RON)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	20,77 RON	20,77 RON
	14,08 RON	140,80 RON
	10,01 RON	1.001,00 RON
Full Reel (Order in multiples of 800)
	8,85 RON	7.080,00 RON

† A MouseReel™ fee of 29,00 RON will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	162 W
Channel Mode:	Enhancement
Tradename:	SuperFET III
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	3 ns
Product Type:	MOSFETs
Rise Time:	13 ns
Series:	SuperFET3
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	19 ns
Unit Weight:	4 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVB190N65S3F Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SUPERFET III® 650V N-Channel MOSFET

onsemi SUPERFET III® 650V 190mΩ N-Channel MOSFET is ideal for various power systems for miniaturization and higher efficiency. The device utilizes charge balance technology for low on-resistance and lower gate-charge performance. The technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. SUPERFET III® 650V 190mΩ N-Channel MOSFETs are ideal for automotive onboard chargers and DC/DC converters for hybrid electric vehicles.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.