NxJS3151P Single P-Channel Power MOSFETs

onsemi NxJS3151P Single P-Channel Power MOSFETs are high-performance MOSFETs designed for efficient switching applications. Housed in a compact SC-88 (SOT-363) 2mm x 2mm package, these onsemi MOSFETs offer a low RDS(on) of just 45mΩ at -4.5V, enabling reduced conduction losses and improved thermal performance. With a maximum drain current of -3.3A and a drain-source voltage rating of -12V, the NxJS3151P devices are well-suited for load switching in portable and battery-powered devices. The ultra-low gate charge and fast switching characteristics contribute to enhanced energy efficiency, making the onsemi NxJS3151P Single P-Channel Power MOSFETs ideal for space-constrained designs where power density and reliability are critical.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
onsemi MOSFETs 12V 3.3A P-Channel 12.925In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SC-88-6 P-Channel 1 Channel 12 V 3.3 A 133 mOhms - 12 V, 12 V 1.2 V 8.6 nC - 55 C + 150 C 625 mW Enhancement Reel, Cut Tape, MouseReel
onsemi MOSFETs NFET SO8FL 12V 3.3A 60MOHM 2.400In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SC-88-6 P-Channel 1 Channel 12 V 2.7 A 160 mOhms - 12 V, 12 V 1.2 V 8.6 nC - 55 C + 150 C 625 mW Enhancement Reel, Cut Tape
onsemi MOSFETs 12V 3.3A P-Channel 2.890In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SC-88-6 P-Channel 1 Channel 12 V 3.3 A 133 mOhms - 12 V, 12 V - 55 C + 150 C 625 mW Enhancement Reel, Cut Tape