Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Nexperia GaN FETs SOT8074 650V 17A FET 2.060In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DFN-8080-8 N-Channel 1 Channel 650 V 17 A 140 mOhms 1.2 nC - 55 C + 150 C 113 W Enhancement
Nexperia GaN FETs SOT8075 650V 17A FET 1.728In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DFN-5060-5 N-Channel 1 Channel 650 V 17 A 140 mOhms - 7 V, + 7 V 2.5 V 3.5 nC - 55 C + 150 C 113 W Enhancement
Nexperia GaN FETs SOT8074 650V 29A FET 286In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DFN-8080-8 N-Channel 1 Channel 650 V 29 A 80 mOhms - 7 V, + 7 V 2.5 V 6.2 nC - 55 C + 150 C 188 W Enhancement
Nexperia GaN FETs SOT8074 650V 11.5A FET 720In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DFN-8080-8 N-Channel 1 Channel 650 V 11.5 A 190 mOhms - 7 V, + 7 V 2.5 V 2.8 nC - 55 C + 150 C 125 W Enhancement
Nexperia GaN FETs SOT8075 650V 11.5A FET
2.483Expected 3/9/2026
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DFN-5060-5 N-Channel 1 Channel 650 V 11.5 A 190 mOhms - 7 V, + 7 V 2.5 V 2.8 nC - 55 C + 150 C 125 W Enhancement