GD3162 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors GD3162 Advanced IGBT/SiC Gate Drivers are designed to drive SiC and IGBT modules in xEV traction inverters. The NXP Semiconductors GD3162 drivers enable space savings and performance through advanced gate-drive functionality. The device includes integrated galvanic isolation, a programmable SPI interface, and advanced protection features like overtemperature, desaturation, and current sense protection. With integrated boost capability, the GD3162 can directly drive most SiC MOSFET and IGBT/SiC module gates.

Results: 8
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Series
Mounting Style
Package/Case
Number of Channels
Isolation Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
1.076In Stock
704Expected 7/21/2026
Min.: 1
Mult.: 1

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Tray
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
1.282In Stock
Min.: 1
Mult.: 1

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Tray
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Reel, Cut Tape
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1
Reel: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Reel, Cut Tape
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Reel
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 176
Mult.: 176

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Tray
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1.000
Mult.: 1.000
Reel: 1.000

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Reel
NXP Semiconductors Galvanically Isolated Gate Drivers Optimised SiC & IGBT GDIC for xEV traction inverters
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 176
Mult.: 176

GD3162 SMD/SMT SOIC-32 1 Channel 8 kVrms - 40 C + 150 C Tray