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NVBG080N120SC1

Name: onsemi NVBG080N120SC1
Brand: onsemi
SKU: 863-NVBG080N120SC1
Price: 49.04 RON
Availability: InStock

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Mouser No:

863-NVBG080N120SC1

Mfr. No:

NVBG080N120SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V

Datasheet:

NVBG080N120SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVBG080N120SC1

In Stock: 1.973

Stock:: 1.973 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+29,00 RON)

Pricing (RON)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	49,04 RON	49,04 RON
	34,05 RON	340,50 RON
	28,77 RON	2.877,00 RON
	28,72 RON	14.360,00 RON
Full Reel (Order in multiples of 800)
	26,86 RON	21.488,00 RON

† A MouseReel™ fee of 29,00 RON will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	179 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	11 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Series:	NVBG080N120SC1
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

NVBG080N120SC1 Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NVBG080N120SC1 1200V SiC MOSFET

onsemi NVBG080N120SC1 1200V SiC MOSFET provides superior switching performance and higher reliability than Silicon. This MOSFET has a low ON resistance and compact chip size, ensuring low capacitance and gate charge. onsemi NVBG080N120SC1 MOSFET features high efficiency, fast operation frequency, increased power density, reduced electromagnetic interference (EMI), and reduced system size. Typical applications include automotive onboard chargers and automotive DC/DC converters for EV/HEV.