1200V Common Emitter IGBT Modules

Infineon Technologies 1200V Common Emitter IGBT Modules are part of the TRENCHSTOP™ IGBT7 portfolio that combines a 600A or 800A common emitter with low saturation and a fast trench IGBT module with an emitter-controlled diode. The 1200V Common Emitter IGBT Modules provide higher current capability in existing packages, allowing an increase in inverter output power with the same frame size. The Infineon 1200V Common Emitter IGBT Modules supply high power density, reliability, and flexibility, prepared for three-level configuration.

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Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Gate-Emitter Leakage Current
Minimum Operating Temperature
Maximum Operating Temperature
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Infineon Technologies IGBT Modules 1200 V, 600 A common emitter IGBT module
Datasheet
26In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 800 A common emitter IGBT module
Datasheet
13In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 100 nA - 40 C + 175 C Tray