MAGX-100027 50V GaN on Si HEMT Amplifiers

MACOM MAGX-100027 50V GaN on Si (Gallium Nitride on Silicon) HEMT (High-Electron-Mobility Transistor) Amplifiers are high-power devices optimized for DC to 2.7GHz frequency operation. The MAGX-100027 Amplifiers support both CW (Continuous Wave) and pulsed operation with peak output power levels from 15W to 300W. Each MACOM MAGX-100027 50V GaN device integrates a pair of isolated, symmetric amplifiers and is internally pre-matched.

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Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
Type
Mounting Style
Package/Case
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
MACOM RF Amplifier Transistor,GaN,100W,CW
Datasheet
287In Stock
Min.: 1
Mult.: 1

0 Hz to 2.7 GHz 50 V 200 mA 18.5 dB General Purpose Amplifiers SMD/SMT TO-272S-2 GaN - 40 C + 85 C MAGX-100027 Bulk
MACOM RF Amplifier Amplifier,GaN,50W,CW
Datasheet
84In Stock
Min.: 1
Mult.: 1

0 Hz to 2.7 GHz 50 V 100 mA 16.8 dB General Purpose Amplifiers SMD/SMT TO-272S-2 GaN - 40 C + 120 C MAGX-100027 Bulk
MACOM RF Amplifier Amplifier, GaN DC to 2700MHz, 250pc T&R
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 250
Mult.: 250
Reel: 250

0 Hz to 2.7 GHz 50 V 16.3 dB General Purpose Amplifiers SMD/SMT TO-252S-4 GaN - 40 C + 85 C MAGX-100027 Reel