It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

FF900R12ME7B11NPSA1

Name: Infineon FF900R12ME7B11NPSA1
Brand: Infineon Technologies
SKU: 726-FF900R12ME7B11N1
Price: 1089.6 RON
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-FF900R12ME7B11N1

Mfr. No:

FF900R12ME7B11NPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 900 A dual IGBT module

Datasheet:

FF900R12ME7B11NPSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies FF900R12ME7B11NPSA1

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 20

Expected 4/28/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- RON

Ext. Price:

-,-- RON

Est. Tariff:

This Product Ships FREE

Pricing (RON)

Qty.	Unit Price	Ext. Price
	1.089,60 RON	1.089,60 RON
	928,64 RON	9.286,40 RON
100	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:	N
Product:	IGBT Silicon Modules
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.5 V
Continuous Collector Current at 25 C:	900 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	IGBT Modules
Factory Pack Quantity:	10
Subcategory:	IGBTs
Technology:	Si
Tradename:	EconoDUAL
Part # Aliases:	FF900R12ME7_B11 SP005422550

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FF900R12ME7B11NPSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8504409100
USHTS:: 8541290065
ECCN:: EAR99

FF900R12ME7_B11 Dual IGBT Module

Infineon Technologies FF900R12ME7_B11 Dual IGBT Module features EconoDUAL™ 3, dual TRENCHSTOP™ IGBT7 module, NTC, and PressFIT contact technology. This IGBT module features high power density, improved terminals, and an integrated NTC temperature sensor. The FF900R12ME7_B11 module has an easy and reliable assembly and avoids the paralleling of IGBT modules. This IGBT module can be stored within a temperature range of -40°C to 125°C. The FF900R12ME7_B11 module includes optimised creepage distance for 1500V PV applications, pressFIT control pins, and screw power terminals. This IGBT module is ideal for use in motor control devices, solutions for solar energy systems, servo drives, and UPS systems.

Industrial Drives

Infineon Industrial Drives offer a broad portfolio of efficient semiconductors optimized for motor drives. The designer can rely on Infineon intelligent power modules (IPMs) and discretes for smart designs in the low-power range. For medium-power drives, the Infineon EasyPIM™, EasyPACK™, and EconoPIM™ modules are the perfect match. Moving on to the high-power spectrum, EconoDUAL™ and PrimePACK™ are the solutions of choice. These are combined with the innovative .XT interconnection technology. PrimePACK modules can help designers overcome the overrating dilemma by extending the lifetime by raising thermal and power cycling capabilities.

IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

EconoDUAL™ 3 IGBT Modules

Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.