MXP120A MaxSiC™ 1200V N-Channel MOSFETs

Vishay Semiconductors MXP120A MaxSiC™ 1200V N-Channel MOSFETs feature 1200V drain-source voltage, fast switching speed, and 3μs short circuit withstand time. These MOSFETs also feature maximum power dissipation of 56W to 268W (Tc=25°C) and continuous drain current of 10.5A to 52A (Tc=25°C). The MXP120A MaxSiC™ 1200V N-Channel MOSFETs are halogen-free and are available in TO-247 3L, TO-247 4L, and TO-263 7L packages. These MOSFETs are used in chargers, auxiliary motor drives, and DC-DC converters.

Results: 5
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET
Datasheet
2.313In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 29 A 100 mOhms - 10 V, + 22 V 2.69 V 47.3 nC - 55 C + 150 C 139 W Enhancement MaxSIC
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, + 22 V 2.38 V 75.6 nC - 55 C + 150 C 227 W Enhancement MaxSIC
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 49 A 56 mOhms - 10 V, + 22 V 2.38 V 75.6 nC - 55 C + 150 C 227 W Enhancement MaxSIC
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Datasheet
Non-Stocked Lead-Time 57 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 10.5 A 313 mOhms - 10 V, + 22 V 3.1 V 20.3 nC - 55 C + 150 C 56 W Enhancement MaxSIC
Vishay Semiconductors SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 10.5 A 313 mOhms - 10 V, + 22 V 3.1 V 20.3 nC - 55 C + 150 C 56 W Enhancement MaxSIC