5G RF JFETs & LDMOS FETs

MACOM 5G RF Junction Field Effect Transistors (JFETs) and Laterally Diffused Metal-Oxide Semiconductor (LDMOS) FETs are thermally enhanced high-power transistors for the next generation of wireless transmission. These devices feature GaN-on-SiC high electron mobility transistor (HEMT) technology, input matching, high efficiency, and a thermally enhanced surface-mount package with an earless flange. MACOM 5G RF JFETs and LDMOS FETs are ideal for multi-standard cellular power amplifier applications. 

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Results: 8
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Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity.
Qty. RoHS
MACOM RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz
Datasheet
90In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 250

MACOM GaN FETs 300W GaN HEMT 48V 2496 to 2690MHz
Datasheet
17In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 50

MACOM GaN FETs 270W GaN HEMT 48V 2496 to 2690MHz
Datasheet
53In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 50

MACOM RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz
Datasheet
Non-Stocked
Min.: 50
Mult.: 50
Reel: 50

MACOM GaN FETs 480W GaN HEMT 48V 3800MHz
Datasheet
50In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 50

MACOM GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz
Datasheet
40In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 50

MACOM GaN FETs 280W GaN HEMT 48V 3400 to 3600MHz
Datasheet
30In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 50

MACOM GaN FETs 400W GaN HEMT 48V 3400 to 3600MHz
Datasheet
40In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 50