BC846B-Q

Diotec Semiconductor
637-BC846B-Q
BC846B-Q

Mfr.:

Description:
Bipolar Transistors - BJT BJT, SOT-23, 65V, 100mA, NPN, 0.25W, 150C

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 3.000

Stock:
3.000 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- RON
Ext. Price:
-,-- RON
Est. Tariff:

Pricing (RON)

Qty. Unit Price
Ext. Price
0,433 RON 0,43 RON
0,267 RON 2,67 RON
0,226 RON 22,60 RON
0,176 RON 88,00 RON
0,156 RON 156,00 RON
0,116 RON 290,00 RON
10.000 Quote

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-23-3
NPN
Single
100 mA
65 V
80 V
6 V
200 mV
250 mW
300 MHz
- 55 C
+ 150 C
Reel
Brand: Diotec Semiconductor
Continuous Collector Current: 100 mA
DC Current Gain hFE Max: 800 V
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
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Attributes selected: 0

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TARIC:
8541210000
USHTS:
8541290095
ECCN:
EAR99

BC846B-Q SMD General-Purpose NPN Transistor

Diotec Semiconductor BC846B-Q SMD General-Purpose NPN Transistor features three current gain groups in a SOT-23 package and complies with RoHS and REACH. This transistor operates at 65V collector-emitter voltage, 80V collector-base voltage, 6V emitter-base voltage, and 200mA peak collector current. The BC846B-Q NPN transistor utilizes bond wires for commercial grades and AU bond wires for all other grades. The commercial-grade transistor features 200mW commercial-grade power dissipation with <625K/W thermal resistance junction to ambient. The industrial-grade transistor features 250mW commercial-grade power dissipation with <420K/W thermal resistance junction to ambient. The BC846B-Q NPN transistor is housed in a UL 94V-0 case material and available in a small SOT-363 Surface-Mount Device (SMD) package. This NPN transistor is ideal for signal processing, switching, amplification, and commercial and industrial-grade use.