TSM2N7002 N-Channel Power MOSFETs

Taiwan Semiconductor TSM2N7002 N-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. These power MOSFETs are available in single and dual configuration variants. The TSM2N7002 power MOSFETs operate at 60V drain-source breakdown voltage and -55°C to +150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (RON) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Taiwan Semiconductor MOSFETs 60V, 0.24A, Single N-Channel Power MOSFET 798In Stock
9.000Expected 6/15/2026
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-323-3 N-Channel 1 Channel 60 V 240 mA 2.5 Ohms - 20 V, 20 V 2.5 V 680 pC - 55 C + 150 C Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 60V, 0.3A, Single N-Channel Power MOSFET 6.322In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 60 V 300 mA 2.5 Ohms - 20 V, 20 V 2.5 V 1.65 nC - 55 C + 150 C 357 mW Enhancement Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 60V, 0.22A, Dual N-Channel Power MOSFET 3.929In Stock
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-363-6 N-Channel 2 Channel 60 V 220 mA 2.5 Ohms - 20 V, 20 V 2.5 V 91 nC - 55 C + 150 C 240 mW Enhancement Reel, Cut Tape, MouseReel