PM8841D

STMicroelectronics
511-PM8841D
PM8841D

Mfr.:

Description:
Gate Drivers 1A low-side gate driver

ECAD Model:
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In Stock: 21.772

Stock:
21.772 Can Dispatch Immediately
Factory Lead Time:
25 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- RON
Ext. Price:
-,-- RON
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (RON)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
3,51 RON 3,51 RON
2,51 RON 25,10 RON
2,26 RON 56,50 RON
1,98 RON 198,00 RON
1,85 RON 462,50 RON
1,77 RON 885,00 RON
1,71 RON 1.710,00 RON
Full Reel (Order in multiples of 3000)
1,62 RON 4.860,00 RON
† A MouseReel™ fee of 29,00 RON will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
Low-Side
SMD/SMT
SOT-23-5
1 Driver
1 Output
1 A
10 V
18 V
20 ns
20 ns
- 40 C
+ 125 C
PM8841
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 6,300 mg
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Attributes selected: 0

TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399999
ECCN:
EAR99

PM8841 Low-Side Gate Driver

STMicroelectronics PM8841 Low-Side Gate Driver is a high frequency single channel low-side MOSFET driver specifically designed to work with digital power conversion microcontrollers, such as the STMicroelectronics STLUX™ family of products. The PM8841 output can sink 1A and source 0.8A. The input levels of the driver are derived by the voltage present at the IN_TH pin (between 2V and 5.5V). This pin is typically connected at the same voltage of the microcontroller supply voltage. The PM8841 device includes both input and output pull-down resistors. UVLO circuitry for input and output stages is present preventing the IC from driving the external MOSFET in unsafe condition.