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TK8A50D(STA4,Q,M)

Name: Toshiba TK8A50D(STA4,Q,M)
Brand: Toshiba
SKU: 757-TK8A50DSTA4QM
Price: 8.95 RON
Availability: InStock

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Mouser No:

757-TK8A50DSTA4QM

Mfr. No:

TK8A50D(STA4,Q,M)

Mfr.:

Toshiba

Description:

MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm

Datasheet:

TK8A50D(STA4,Q,M) Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK8A50D(STA4,Q,M)

In Stock: 337

Stock:: 337

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On Order:: 250

Expected 3/16/2026
Factory Lead Time:: 32

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (RON)

Qty.	Unit Price	Ext. Price
	8,95 RON	8,95 RON
	4,54 RON	45,40 RON
	4,41 RON	441,00 RON
	3,48 RON	1.740,00 RON
	2,74 RON	2.740,00 RON
	2,73 RON	6.825,00 RON
	2,72 RON	13.600,00 RON

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	850 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	1 S
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	TK8A50D
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	2 g

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Datasheet

TK8A50D(STA4,Q,M) Datasheet (PDF)

Application Notes

Models

Product Catalogs

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TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.