GT30J121(Q)

Toshiba
757-GT30J121(Q)
GT30J121(Q)

Mfr.:

Description:
IGBTs 600V/30A DIS

ECAD Model:
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In Stock: 82

Stock:
82 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- RON
Ext. Price:
-,-- RON
Est. Tariff:

Pricing (RON)

Qty. Unit Price
Ext. Price
18,36 RON 18,36 RON
12,12 RON 121,20 RON
8,50 RON 850,00 RON
6,99 RON 3.495,00 RON
6,89 RON 6.890,00 RON

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-3P-3
Through Hole
Single
600 V
2 V
- 20 V, 20 V
30 A
170 W
- 55 C
+ 150 C
GT30J121
Tube
Brand: Toshiba
Continuous Collector Current Ic Max: 30 A
Product Type: IGBT Transistors
Factory Pack Quantity: 100
Subcategory: IGBTs
Unit Weight: 6,756 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99