Qorvo QPD0011EVB1 Evaluation Board
Qorvo QPD0011EVB1 Evaluation Board is a demonstration and development platform for the Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor). The QPD0011 is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.
The QPD0011EVB1 Evaluation Board features a pre-mounted Qorvo QPD0011 in a compact 7.0mm x 6.5mm DFN package. The Evaluation Board provides an example application circuit, allowing rapid prototyping when incorporated into existing designs.
Supported Device
Qorvo QPD0011 30W/60W 48V GaN on SiC HEMT
Asymmetric dual-path power amplifier transistor with a maximum Doherty gain of 13.3dB.
Published: 2021-04-22
| Updated: 2022-03-11