Qorvo QPD0011 30W/60W 48V GaN on SiC HEMT

Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor) is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.

The Qorvo QPD0011 GaN on SiC HEMT is offered in a compact 7.0mm x 6.5mm DFN package.


  • 3.3GHz to 3.6GHz operating frequency range
  • +48V operating drain voltage (VD)
  • 90W maximum Doherty peak power at 3.5GHz
  • 48% maximum Doherty drain efficiency at 3.5GHz
  • 13.3dB maximum Doherty gain at 3.5GHz
  • 49.5dBm output power at saturation (PSAT)
  • 65mA quiescent drain current (IDQ)
  • 7.0mm x 6.5mm DFN package
  • Halogen-free, lead-free, and RoHS compliant


  • WCDMA and LTE
  • Macrocell base stations
  • Microcell base stations
  • Small cell
  • Active antenna
  • 5G massive MIMO
  • Asymmetric Doherty applications
Published: 2021-04-22 | Updated: 2022-03-11