Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor) is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.
The Qorvo QPD0011 GaN on SiC HEMT is offered in a compact 7.0mm x 6.5mm DFN package.
3.3GHz to 3.6GHz operating frequency range
+48V operating drain voltage (VD)
90W maximum Doherty peak power at 3.5GHz
48% maximum Doherty drain efficiency at 3.5GHz
13.3dB maximum Doherty gain at 3.5GHz
49.5dBm output power at saturation (PSAT)
65mA quiescent drain current (IDQ)
7.0mm x 6.5mm DFN package
Halogen-free, lead-free, and RoHS compliant
WCDMA and LTE
Macrocell base stations
Microcell base stations
5G massive MIMO
Asymmetric Doherty applications
Qorvo QPD0011EVB1 Evaluation Board
Demonstration and development platform for the QPD0011 30W/60W 48V GaN on SiC HEMT.