Qorvo QPD0011 30W/60W 48V GaN on SiC HEMT
Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor) is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.
The Qorvo QPD0011 GaN on SiC HEMT is offered in a compact 7.0mm x 6.5mm DFN package.
Features
- 3.3GHz to 3.6GHz operating frequency range
- +48V operating drain voltage (VD)
- 90W maximum Doherty peak power at 3.5GHz
- 48% maximum Doherty drain efficiency at 3.5GHz
- 13.3dB maximum Doherty gain at 3.5GHz
- 49.5dBm output power at saturation (PSAT)
- 65mA quiescent drain current (IDQ)
- 7.0mm x 6.5mm DFN package
- Halogen-free, lead-free, and RoHS compliant
Applications
- WCDMA and LTE
- Macrocell base stations
- Microcell base stations
- Small cell
- Active antenna
- 5G massive MIMO
- Asymmetric Doherty applications
Development Tools
Qorvo QPD0011EVB1 Evaluation Board
Demonstration and development platform for the QPD0011 30W/60W 48V GaN on SiC HEMT.
Published: 2021-04-22
| Updated: 2022-03-11