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Central Semiconductor P-Channel Enhancement Mode MOSFETs

Central Semiconductor P-Channel Enhancement Mode MOSFETs offer low rDS(ON) and low threshold voltage. CMUDM8004 and CMUDM8005 ULTRAmini™ MOSFETs, CMLDM8005 PICOmini™, and CMNDM8001 FEMTOmini™ devices are designed for high-speed pulsed amplifier and driver applications. Central Semiconductor CMUDM8004 / CMUDM8005 and CMNDM8001 MOSFETs are manufactured by the P-channel DMOS process. CMLDM8005 features 350mW power dissipation.

Features

  • CMNDM8001
    • Low 0.5mm package profile
    • Low rDS(ON)
    • Low threshold voltage
    • Logic level compatible
    • Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 surface mount package
  • CMUDM8004
    • ESD protection up to 2kV
    • Low rDS(ON)
    • Low threshold voltage
    • Logic level compatible
    • Small, SOT-523 surface mount package
    • CMUDM7004 Complementary N-channel MOSFET
  • CMUDM8005
    • ESD protection up to 2kV
    • 300mW Power dissipation
    • Very low rDS(ON)
    • Low threshold voltage
    • Logic level compatible
    • Small, SOT-523 surface mount package
  • CMLDM8005
    • ESD Protection up to 2kV
    • 350mW Power dissipation
    • Very low rDS(ON)
    • Low threshold voltage
  • Logic level compatible
  • Small, SOT-563 surface mount package
  • CMLDM7005 Complementary dual N-channel device

Applications

  • Load/power switches
  • Power supply converter circuits
  • Battery-powered portable devices
  • Electro-luminescent backlighting (CMLDM8005)

Additional Resources

Published: 2012-05-07 | Updated: 2022-03-11