CGH40035F

Wolfspeed Logo
941-CGH40035F

CGH40035F

Mfr.:

Description:
RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt

ECAD Model:
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In Stock: 271

Stock:

271
Can Dispatch Immediately

On Order:

20
Expected 05-Dec-22

Factory Lead Time:

28
Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

-,-- RON
-,-- RON
This Product Ships FREE

Pricing (RON)

Qty. Unit Price
Ext. Price
1 941,84 RON 941,84 RON
10 927,73 RON 9.277,30 RON
50 907,24 RON 45.362,00 RON
100 Quote
Product Attribute Attribute Value
Wolfspeed
Product Category: RF JFET Transistors
RoHS:  Details
HEMT
GaN
2 GHz to 4 GHz
15 dB
N-Channel
120 V
- 10 V to 2 V
4.5 A
45 W
-
- 40 C
+ 150 C
-
Screw Mount
440193
Tray
Application: -
Brand: Wolfspeed
Class: -
Configuration: Single
Development Kit: CGH40035F-TB
Fall Time: -
Forward Transconductance - Min: -
Gate-Source Cut-off Voltage: -
Height: 4.19 mm
Length: 20.46 mm
NF - Noise Figure: -
Operating Temperature Range: -
P1dB - Compression Point: -
Product: GaN HEMT
Product Type: RF JFET Transistors
Rds On - Drain-Source Resistance: -
Rise Time: -
Factory Pack Quantity: 1
Subcategory: Transistors
Typical Turn-Off Delay Time: -
Vgs th - Gate-Source Threshold Voltage: - 3 V
Width: 5.97 mm
Unit Weight: 13,381 g
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TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290075
JPHTS:
854239099
KRHTS:
8541299000
MXHTS:
8542399901
ECCN:
EAR99

GaN HEMTs

Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

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